IRF240R Ver la hoja de datos (PDF) - New Jersey Semiconductor
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IRF240R Datasheet PDF : 2 Pages
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IRF240R, IRF241R
IRF242R, IRF243R
Electrical Characteristics @ To = 25°C (Unless Otherwise Specified)
Parameter
BVou Drain - Source Breakdown Voltage
Vow*
lau
IQU
lou
Gate Threshold Voltage
Gate-Source Leakage Forward
Gate-Source Leakage Reverse
Zero Gate Voltage Drain Current
IDMU On-State Drain Current ®
RMUM Static Drain-Source On-State
Resistance ®
On Forward Traniconductance ®
Cio> Input Capacitance
Cm Output Capacitance
Co. Reverse Transfer Capacitance
tdiem Turn-On Delay Time
t.
Rise Time
W» Turn-Off Delay Time
ti
Fall Time
Q, Total Gate Charge
(Gate-Source Plus Gate-Drain)
CU Gate-Source Charge
QM Gate-Drain ("Miller") Charge
Lo
Internal Drain Inductance
Type Mln. Typ. Max.
IRF240R
IRF242R
200
-
-
IRF241R
IRF243R
150
ALL 2.0
ALL
—
ALL
_
_
ALL
—
IRF240R
IRF241R
18
-
-
_
4.0
—
100
_
_
-100
250
_ 1000
_
-
IRF242R
IRF243R
18
-
-
IRF240R
IRF241R
-
0.14 0,18
IRF242R
IRF243R
-
0.20
0.22
_
ALL
ALL
8_.0
9.0
_
1275
—
_
ALL
500
ALL
„
160
—
ALL
—
16
30
ALL
—
27
60
ALL
—
40
80
ALL
—
31
60
ALL
-
43
60
_
ALL
ALL
_
16
27
—_
ALL
5.0
La
Internal Source Inductance
ALL
12.5
Units
V
V
V
nA
nA
«A
ilA
A
A
a
a
S(U)
OF
PF
PF
ns
ns
ns
ns
nC
nC
nC
nH
nH
Tsst Conditions
la = 250pA
VM = VM, ID = 250*1 A
Vo« = 20V
Vm = -20V
VM = Max. Rating, Vu = 0V
VM = Max. Rating x 0.8. V« = 0V, Tc = 125°C
VM > lounl X RMUAI iw., Vo. = 10V
VM > IDIOM X RMUMmoi., D-10A
See Fig. 10
1.0MHz
VDO - 75V. ID = 10A, Zo = 4.7O
See Fig. 17
(MOSFET switching Mmes are essentially
Independent of operating temperature.)
Vot = 10V, lo = 22A, VM = 0.8 Max. Rating.
See Fig. 18 (or test clrcuit, (Gate charge Is
essentially independent of operating
temperature,)
Measured between
the contact screw on
header that I* closer to
source and gate pins
and center of die.
Measured from the
source pin, 6 mm
(0.25 In.) from
header and source
bonding pad.
Modified MOSFET
symbol showing the
internal device „
Inductances o
Thermal Resistance
R>JC Junction-to-Caso
R«CS Case-to-SInk
RtJA Junction-to-Ambisnt
_
_
ALL
1.0 °C/W
ALL
—
0.1
_ °c/w Mounting surface flat, smooth, and greased.
ALL
—
—
30 •cw Free Air Operation
Source-Drain Diode Ratings and Characteristics
li
Continuous Source Cu rrent
(Body Diode)
IBM Pulse Source Current
(Body Diode) ®
VK. Diode Forward Voltage ©
U
Reverse Recovery Time
QM Reverse Recovered Charge
UK
Forward Turn-on Time
IRF240R
IRF241R
-
IRF242R
IRF243R
-
IRF240R
IRF241R
-
IRF242R
IRFS43R
-
IRF240R
IRF241R
-
IRF242R
IRF243R
-
_
ALL
_
ALL
ALL
-
18
- ie
A
Modified MOSFET symbol
showing the integral
A
reverse P-N Junction rectifier.
D
o
/'jii,
- 72
A
s
- 64
A
-
2.0
V To = 25°C. I. = ISA. VM = 0V
-
1.9
V Tc = 25°C. l<= 16A, Vas = 0V
_
650
ns Tj = 150°C. IF - 18A. dWdt = 100A//B
4.1
—
liC Tj = 150°C. 1* = 18A. dlr/dt - lOOA/ws
Intrinsic turn-on time is negligible.
Turn-on speed is substantially controlled by La + LD.
® Tj = 25°C to 150°C. ® Pulse Test: Pulse width < 300^s, Duty Cycle < 2%.
® Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5).
® Voo = 50V. starting Tj = 25"C, L = 2.7 mH, R., = 5TJO. lp_i, = 18A. See figures 15.16.
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