Q67042-S4300 Ver la hoja de datos (PDF) - Infineon Technologies

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Q67042-S4300

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

13 Forward characteristics of reverse diode

I F=f(V SD)

parameter: T j

0.1

150 °C

25 °C

BSS126

15 Typ. gate charge

V GS=f(Q gate); I D=0.1 A pulsed

parameter: V DD

6

0.2 VDS(max) 0.5 VDS(max)

5

4

150 °C, 98%

3

0.8 VDS(max)

25 °C, 98%

2

0.01

1

0

-1

-2

-3

0.001

-4

0

0.5

1

1.5

2

2.5

0

0.4

0.8

1.2

1.6

V SD [V]

Q gate [nC]

16 Drain-source breakdown voltage

I D=f(V GS); V DS=3 V; T j=25 °C

700

660

620

580

540

500

-60 -20

20

60 100 140 180

T j [°C]

Rev. 1.3

page 7

2006-06-14

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