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STW13NK60Z

N-CHANNEL 600V-0.48Ω-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™ Power MOSFET

STMicroelectronics 

STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS Drain-source

ID = 1 mA, VGS = 0

600

V

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

µA

50

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th) Gate Threshold Voltage

VDS = VGS, ID = 100 µA

3

3.75

4.5

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V, ID = 5 A

0.48 0.55

Ω

DYNAMIC

Symbol

Parameter

gfs (1) Forward Transconductance

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Coss eq. (3) Equivalent Output

Capacitance

SWITCHING ON

Symbol

Parameter

td(on)

tr

Turn-on Delay Time

Rise Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Test Conditions

VDS = 8 V, ID = 5 A

VDS = 25 V, f = 1 MHz, VGS = 0

Min.

VGS = 0V, VDS = 0V to 480 V

Test Conditions

VDD = 300 V, ID = 5 A

RG = 4.7Ω VGS = 10 V

(Resistive Load see, Figure 3)

VDD = 480 V, ID = 10 A,

VGS = 10 V

Min.

Typ.

11

2030

210

48

125

Typ.

22

14

66

11

33

Max. Unit

S

pF

pF

pF

pF

Max. Unit

ns

ns

92

nC

nC

nC

SWITCHING OFF

Symbol

Parameter

td(off)

tf

Turn-off Delay Time

Fall Time

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

Test Conditions

VDD = 300 V, ID = 5 A

RG = 4.7Ω VGS = 10 V

(Resistive Load see, Figure 3)

VDD = 480V, ID = 10 A,

RG = 4.7Ω, VGS = 10V

(Inductive Load see, Figure 5)

Min.

Typ.

61

12

10

9

20

Max. Unit

ns

ns

ns

ns

ns

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

10

A

40

A

VSD (1) Forward On Voltage

ISD = 10 A, VGS = 0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 10 A, di/dt = 100 A/µs

VDD = 35 V, Tj = 150°C

(see test circuit, Figure 5)

570

ns

4.5

µC

16

A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

3/14

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