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2SD1899

TO-252-2L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate Transistors

2SD1899 TRANSISTOR (NPN)

TO-252-2L

FEATURES

z Low VCE(sat)

z High Transition Frequency

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

60

60

7

3

1

125

150

-55~+150

1. BASE

2. COLLECTOR

3. EMITTER

Unit

V

V

V

A

W

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Collector-base breakdown voltage

V(BR)CBO

Collector-emitter breakdown voltage

V(BR)CEO

Emitter-base breakdown voltage

V(BR)EBO

Collector cut-off current

ICBO

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

IEBO

hFE(1)*

hFE(2)*

hFE(3)*

VCE(sat)*

VBE(sat)*

Collector output capacitance

Cob

Transition frequency

fT

*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.

Test conditions

IC=100µA,IE=0

IC=1mA,IB=0

IE=100µA,IC=0

VCB=60V,IE=0

VEB=7V,IC=0

VCE=2V, IC=0.2A

VCE=2V, IC=0.6A

VCE=2V, IC=2A

IC=1.5A,IB=0.15A

IC=1.5A,IB=0.15A

VCB=10V,IE=0, f=1MHz

VCE=5V,IC=1.5A

Min Typ Max Unit

60

V

60

V

7

V

10 μA

10 μA

60

100

400

50

0.25 V

1.2

V

30

pF

120

MHz

CLASSIFICATION OF hFE(2)

RANK

M

RANGE

100-200

L

160-320

K

200-400

www.cj-elec.com

1

D,Mar,2016

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