A1261 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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A1261

Silicon PNP Power Transistors

New Jersey Semiconductor 

Silicon PNP Power Transistor

2SA1261

ELECTRICAL CHARACTERISTICS

Tc=25t: unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage lc=-5.0A; IB=-0.5A, L=1mH

VcEX(SUS)-1 Collector-Emitter Sustaining Voltage

VcEX(SUS)-2 Collector-Emitter Sustaining Voltage

lc=-5.0A; IB1=-IB2= -0.5A,

VBE(OFFp5.0V, L=180|J H, clamped

lc=-10A; IB1=-1.0A; IB2=-0.5A,

VBE<OFF)= 5.0V, L= 180|j H,clamped

VcE(sat) Collector-Emitter Saturation Voltage lc= -5.0A; IB= -0.5A

VBE(sat) Base-Emitter Saturation Voltage

lc= -5.0A; IB= -0.5A

ICBO

Collector Cutoff Current

VOB=-100V; IE=0

ICER

Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCE= -100V; RBE= 51 D ,Ta=125°C

VCE=-100V; VBE(0ff)=-1.5V

VCE= -100V; VBE(off)= -1 .5V, Ta=125T

VEB= -5V; lc= 0

hpE-i

DC Current Gain

lc= -0.5A; VCE= -5V

hFE-2

hFE-3

DC Current Gain

DC Current Gain

lc= -3.0A; VCE= -5V

lc= -5.0A; VCE= -5V

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC=-5.0A, RL=10n,

|B1= -|B2= -0.5A, VCc=-50V

MIN MAX UNIT

-100

V

-100

V

-100

V

-0.6

V

-1.5

V

-10

MA

-1.0

mA

-10

MA

-1.0

mA

-10

MA

40

200

40

200

20

0.5

Ms

1.5

Ms

0.5

MS

• hpE-2 Classifications

M

L

K

40-80 60-120 100-200

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