2N6546 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2N6546

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.0A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 3.0A

VBE(sat) Base-Emitter Saturation Voltage

IC= 10A; IB= 2.0A

IEBO

Emitter Cutoff Current

VEB= 9.0V; IC=0

hFE-1

DC Current Gain

IC= 5.0A ; VCE= 2V

hFE-2

DC Current Gain

IC= 10A ; VCE= 2V

fT

Current Gain-Bandwidth Product

IC= 0.5A ; VCE= 10V; ftest=1.0MHz

Switching times-Resistive Load

td

Delay Time

tr

Rise Time

ts

Storage Time

tf

Fall Time

IC= 10A , VCC= 250V,

IB1= -IB2= 2A, tp= 0.5ms

Duty Cycle≤2.0%

2N6546

MIN MAX UNIT

300

V

1.5

V

5.0

V

1.6

V

1.0 mA

12

60

6.0 30

6.0 35 MHz

0.05 μs

1.0 μs

4.0 μs

0.8 μs

SPTECH website：www.superic-tech.com

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