2SD871 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Número de pieza

componentes Descripción

Lista de partido

2SD871

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·High Breakdown Voltage-

: VCBO= 1500V (Min)

·High Switching Speed

·Low Collector Saturation Voltage-

: VCE(sat)= 5.0V(Max.)@ IC= 5A

·Built-in Damper Diode

APPLICATIONS

·Designed for color TV horizontal output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1500

V

VCEO

Collector-Emitter Voltage

600

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current- Continuous

6

A

IE

Emitter Current- Continuous

PC

Collector Power Dissipation

@ TC= 25℃

TJ

Junction Temperature

6

A

50

W

150

℃

Tstg

Storage Temperature Range

-65~150

℃

2SD871

SPTECH website：www.superic-tech.com

1

Share Link: