SPTECH Product Specification
SPTECH Silicon NPN Power Transistors
2SC2690/A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC=0
hFE-1
DC Current Gain
IC= 5mA ; VCE= 5V
hFE-2
DC Current Gain
IC= 0.3A ; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V;ftest= 1.0MHz
MIN TYP. MAX UNIT
0.7
V
1.3
V
1.0 μA
1.0 μA
35
60
320
155
MHz
19
pF
hFE-2 Classifications
R
Q
P
60-120 100-200 160-320
SPTECH website:www.superic-tech.com
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