2SD743 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SD743 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SD743
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
80
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
80
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
2.0
V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
10 μA
hFE-1
DC Current Gain
IC= 20mA; VCE= 5V
20
hFE-2
DC Current Gain
IC= 0.5A; VCE= 5V
40
200
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 5V; ftest= 1.0MHz
10
MHz
hFE-2 Classifications
S
R
Q
40-80 60-120 100-200
SPTECH website：www.superic-tech.com
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