2SD745 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SD745

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

ICBO

Collector Cutoff Current

VCB= 140V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 3V; IC= 0

hFE-1

DC Current Gain

IC= 50mA; VCE= 5V

hFE-2

DC Current Gain

IC= 2A; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 1.0MHz

fT

Current-Gain—Bandwidth Product IC= 0.2A; VCE= 5V

 hFE-2 Classifications

S

R

Q

40-80 60-120 100-200

2SD745

MIN TYP. MAX UNIT

1.5

V

2.0

V

50 μA

50 μA

20 55

40 80 200

270

pF

15

MHz

SPTECH website：www.superic-tech.com

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