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IRF820

20A 600V N CHANNEL POWER MOSFET

First Components International 

IRF820 20A 600V N CHANNEL POWER MOSFET

ORDERING INFORMATION

Part Number

Package

IRF820-251............................................TO-251

..................IRF820-DP............................................TO-252

..................IRF820-220............................................TO-220

..................IRF820-220FP

TO-220 Full Package

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25к.

Characteristic

Drain-Source Breakdown Voltage

(VGS = 0 V, ID = 250 ӴA)

Drain-Source Leakage Current

(VDS = 600 V, VGS = 0 V)

(VDS = 480 V, VGS = 0 V, TJ = 125к)

Gate-Source Leakage Current-Forward

(Vgsf = 20 V, VDS = 0 V)

Gate-Source Leakage Current-Reverse

(Vgsr = 20 V, VDS = 0 V)

Gate Threshold Voltage

(VDS = VGS, ID = 250 ӴA)

Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.2A) *

Forward Transconductance (VDS Њ 50 V, ID = 1.0A) *

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 V, VGS = 0 V,

f = 1.0 MHz)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

(VDD = 300 V, ID = 2.0 A,

VGS = 10 V,

RG = 18ȍ) *

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

(VDS = 400 V, ID = 2.0 A,

VGS = 10 V)*

Internal Drain Inductance

(Measured from the drain lead 0.25” from package to center of die)

Internal Drain Inductance

(Measured from the source lead 0.25” from package to source bond pad)

SOURCE-DRAIN DIODE CHARACTERISTICS

Forward On-Voltage(1)

Forward Turn-On Time

Reverse Recovery Time

(IS = 2.0 A, VGS = 0 V,

dIS/dt = 100A/µs)

* Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2%

** Negligible, Dominated by circuit inductance

Symbol

V(BR)DSS

IDSS

IGSSF

IGSSR

VGS(th)

RDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

LD

LS

IRF820

Min

Typ

Max

Units

600

V

mA

0.1

1.0

100

nA

100

nA

2.0

4.0

V

4.4

ȍ

1.4

mhos

435

pF

56

pF

9.2

pF

12

ns

21

ns

30

ns

24

ns

13

22

nC

2.0

nC

6.0

nC

4.5

nH

7.5

nH

VSD

1.5

V

ton

**

ns

trr

340

ns

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