SSM85T03J Ver la hoja de datos (PDF) - Silicon Standard Corp.
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SSM85T03J Datasheet PDF : 5 Pages
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SSM85T03H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate-charge
Simple drive requirement
Fast switching
Description
D
G
S
BV DSS
R DS(ON)
ID
30V
6mΩ
75A
The SSM85T03H is in a TO-252 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters. The through-hole
version, the SSM85T03J in TO-251, is available for low-footprint vertical
mounting. These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance. The devices
have a maximum junction temperature rating of 175°C for improved thermal
margin and reliability.
G D S TO-252 (H)
G
D
S
TO-251 (J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TC=25°C
ID @ TC=100°C
IDM
PD @ TC=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
± 20
75
55
350
107
0.7
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.4
110
Unit
°C/W
°C/W
8/16/2004 Rev.2.1
www.SiliconStandard.com
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