SSM85T03H Ver la hoja de datos (PDF) - Silicon Standard Corp.
Número de pieza
componentes Descripción
Lista de partido
SSM85T03H Datasheet PDF : 5 Pages
| |||
SSM85T03H,J
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
∆ ∆ BVDSS/ Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
VGS=4.5V, ID=30A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=175oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS= ± 20V
ID=30A
VDS=24V
VGS=4.5V
VDS=15V
ID=30A
RG=3.3Ω ,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=0.5Ω
VGS=0V
VDS=25V
f=1.0MHz
30 -
-
V
- 0.018 - V/°C
-
-
6 mΩ
-
- 10 mΩ
1
-
3
V
- 32 -
S
-
-
1 uA
-
- 500 uA
-
- ±100 nA
- 33 52 nC
- 7.5
nC
- 24
nC
- 11.2 - ns
- 77 - ns
- 35 - ns
- 67 - ns
- 2700 4200 pF
- 550 - pF
- 380 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.3 V
- 28 - ns
- 10 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
8/16/2004 Rev.2.1
www.SiliconStandard.com
2 of 5
Share Link: 