IRFIBC30G Ver la hoja de datos (PDF) - Inchange Semiconductor
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IRFIBC30G Datasheet PDF : 2 Pages
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iscN-Channel MOSFET Transistor
·FEATURES
·Low drain-source on-resistance:
RDS(ON) =2.2Ω (MAX)
·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
2.5
A
IDM
Drain Current-Single Pulsed
10
A
PD
Total Dissipation @TC=25℃
35
W
Tj
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX
3.6
UNIT
℃/W
IRFIBC30G
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