A1203 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

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A1203

Silicon Planar Epitaxial Transistor

Galaxy Semi-Conductor 

Production specification

Silicon Planar Epitaxial Transistor

2SA1203

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN

TYP MAX UNIT

Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO IE=-1mA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-30V,IE=0

-0.1 μA

Emitter cut-off current

IEBO

DC current gain

hFE

Collector-emitter saturation voltage VCE(sat)

Base-emitter

VBE

Transition frequency

fT

Collector output capacitance

Cob

VEB=-5V,IC=0

VCE=-2V,IC=-500mA 100

IC=-1.5A,IB=-0.03A

VCE=-2V,IC=-500mA

VCE=-2V, IC=-500mA

VCB=-10V,IE=0,f=1MHz

-0.1 μA

320

-2 V

-1

120

MHz

50 pF

CLASSIFICATION OF hFE

Rank

Range

Marking

O

100-200

HO1

Y

160-320

HY1

E038

Rev.A

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