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EV-ADF4196SD1Z Ver la hoja de datos (PDF) - Analog Devices

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EV-ADF4196SD1Z Datasheet PDF : 28 Pages
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Data Sheet
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
AVDD to Ground
AVDD to DVDD1, DVDD2, DVDD3, SDVDD
VP1, VP2, VP3 to Ground
VP1, VP2, VP3 to AVDD
Digital I/O Voltage to Ground
Analog I/O Voltage to Ground
REFIN, RFIN+, RFIN− to Ground
Operating Temperature Range
Industrial
Storage Temperature Range
Maximum Junction Temperature
Reflow Soldering
Peak Temperature
Time at Peak Temperature
Rating
−0.3 V to +3.6 V
−0.3 V to +0.3 V
−0.3 V to +5.8 V
−0.3 V to +5.8 V
−0.3 V to VDD + 0.3 V
−0.3 V to VP1, VP2, VP3 + 0.3 V
−0.3 V to VDD + 0.3 V
−40°C to +85°C
−65°C to +125°C
150°C
260°C
40 sec
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
This device is a high performance RF integrated circuit with
an ESD rating of <2 kV, and it is ESD sensitive. Take proper
precautions for handling and assembly.
ADF4196
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type
θJA
32-Lead LFCSP (Paddle Soldered) 27.3
Unit
°C/W
TRANSISTOR COUNT
This device includes 75,800 metal oxide semiconductors (MOS)
and 545 bipolar junction transistors (BJT).
ESD CAUTION
Rev. D | Page 5 of 28

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