MMDF2P01HD Ver la hoja de datos (PDF) - ON Semiconductor

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MMDF2P01HD

Power MOSFET 2 Amps, 12 Volts P−Channel SO−8, Dual

ON Semiconductor 

MMDF2P01HD

100

VGS = 8 V

SINGLE PULSE

TC = 25°C

10

Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″

thick single sided) with one die operating, 10s max.

1 ms

10 ms

1

dc

0.1

0.01

0.1

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

1

10

100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

TYPICAL ELECTRICAL CHARACTERISTICS

10

1

D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

0.001

1.0E−05

SINGLE PULSE

1.0E−04

1.0E−03

Normalized to θja at 10s.

Chip 0.0175 Ω 0.0710 Ω 0.2706 Ω 0.5776 Ω 0.7086 Ω

0.0154 F 0.0854 F

0.3074 F 1.7891 F

107.55 F Ambient

1.0E−02

1.0E−01

t, TIME (s)

1.0E+00

Figure 13. Thermal Response

1.0E+01

1.0E+02

1.0E+03

IS

tp

di/dt

trr

ta

tb

0.25 IS

IS

TIME

Figure 14. Diode Reverse Recovery Waveform

http://onsemi.com

7

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