MPSU01 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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MPSU01 Datasheet PDF : 1 Pages
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<£/\ £ur
<Se.mi-Condu.ctoi.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
s., Unc.
NPN SILICON ANNULAR TRANSISTORS
. . . designed for complementary symmetry audio circuits to 10
Watts output.
• LowCollector-Emitter Saturation Voltage —
vCE(sat) = 0.5 Vdc (Max) @Ic = 1.0 Adc
• Complements to PNP MPSU51 and MPSU51A
• Uniwatt Package for Excellent Thermal Properties -
1.0 Watt @TA = 25°C
TELEPHONE: (201) 376-2922
(212)227-6005
FAX: (201) 376-8960
MPSU01
MPSU01A
A
B —1
Q
T
E«C
1 1I
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Total Power Dissipation 0 TA " 25°C
Derate above 25°C
Total Power Dinipation 9 TQ " 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCB
VEB
'c
PD
PD
TJ.T"stg
MPSU01 MPSU01A
30
40
40
50
5.0
2.0
1.0
8.0
10
80
-55 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance. Junction to Ambient
Symbol
Max
RSJC
12.5
H»JA(1)
125
Unit
°C/W
°c/w
I1' RSJA '• measured with the device soldered into •typical printed circuit bocrd.
— STYLE 1:
-JU,
N PIN 1. EMITTER
2. BASE
3. COLLECTOR
(COLLECTOR CONNECTED TO
NOTE:
1. LEADS WITHIN 0.15 mm(0.006) TOTAL OF TRUE
POSITION AT CASE, AT MAXIMUM MATERIAL
CONDITION.
MUJMETERS
MCHES
DM MM MAX MM MAX
A
9.14
9.S3
0.360 OJ7S
B
6.60
774 0.2SJ 0785
C
$.41
5.68
0.213 0.223
D OJ8
0.53
0.015 0.021
F
3.18
133 O.IK
0.131
Q
2.54 BSC
0.100 BSC
H
3.94
4.19
0.155 0.165
J
OJ6
0.41
4.014 0.016
K 11.63 12.70 0.458 0.500
L 24.58 25.53 0.988 1.005
N
5.08 BSC
0700 BSC
9
239
289 0.094 0.106
R
1.14
1.40
0.045 0.055
Quality Semi-Conductors
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