MTP1N100E Ver la hoja de datos (PDF) - ON Semiconductor
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MTP1N100E Datasheet PDF : 7 Pages
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MTP1N100E
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.8 TJ = 25°C
1.6
VGS = 10 V
6V
1.4
5V
1.2
1.0
0.8
0.6
0.4
0.2
4V
00 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
2.0
1.8 VDS ≥ 10 V
1.6
100°C
1.4
1.2
1.0
25°C
0.8
0.6
0.4
TJ = −55°C
0.2
0
2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
16
VGS = 10 V
14
12
TJ = 100°C
10
8
25°C
6
4
2
− 55°C
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
2.8
VGS = 10 V
2.4 ID = 0.5 A
2.0
1.6
1.2
0.8
0.4
0
−50 −25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
8.0
7.8 TJ = 25°C
7.6
7.4
7.2
7.0
6.8
VGS = 10 V
6.6
6.4
15 V
6.2
6.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
10000
1000
100
TJ = 125°C
100°C
10
1.0
25°C
0.1
0.01
0
VGS = 0 V
100 200 300 400 500 600 700 800 900 1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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