MTP1N50E Ver la hoja de datos (PDF) - ON Semiconductor
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MTP1N50E Datasheet PDF : 8 Pages
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MTP1N50E
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.75
1.50
1.25
1.0
0.75
0.50
0.25
0
0
TJ = 25°C
VGS = 10 V
7V
8V
6V
5V
2
4
6
8 10 12 14 16
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
2.0
VDS ≥ 10 V
1.75
1.50
1.25
1.0
0.75
0.50
TJ = 100°C
0.25
25°C
− 55°C
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
10
VGS = 10 V
8
TJ = 100°C
6
25°C
4
− 55°C
2
0
0
0.4
0.8
1.2
1.6
2.0
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
6.0
TJ = 25°C
5.5
5.0
VGS = 10 V
4.5
15 V
4.0
3.5
3.0
0 0.25 0.50 0.75 1.0 1.25 1.50 1.75 2.0
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
ID = 0.5 A
2.0
1.5
1.0
0.5
10000
VGS = 0 V
1000
100
10
TJ = 125°C
100°C
25°C
0
−50 −25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0
100
200
300
400
500
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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