MTP1N60 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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MTP1N60 Datasheet PDF : 2 Pages
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N-Channel Mosfet Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; I0= 0.25mA
VGS(th) Gate Threshold Voltage
RoS(on) Drain-Source On-Resistance
loss
Gate-Body Leakage Current
VDS= VGS; lo= 0.25mA
V0s=10V;lD=0.5A
VGS= ±20V;VDS=0
loss
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
VSD
Forward On-Voltage
ls= 1A; VGS= 0
WIN
MAX UNIT
600
V
2
4
V
8
Q
±100
nA
1
uA
1.8
V
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