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MTY14N100E

TMOS E−FET Power Field Effect Transistor

ON Semiconductor 

MTY14N100E

TMOS E−FET.™

Power Field Effect

Transistor

N−Channel Enhancement−Mode Silicon

Gate

This advanced TMOS power FET is designed to withstand high

energy in the avalanche and commutation modes. This new energy

efficient design also offers a drain−to−source diode with fast recovery

time. Designed for high voltage, high speed switching applications in

power supplies, converters, PWM motor controls, and other inductive

loads. The avalanche energy capability is specified to eliminate the

guesswork in designs where inductive loads are switched and offer

additional safety margin against unexpected voltage transients.

• Avalanche Energy Specified

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDS(on) Specified at Elevated Temperature

http://onsemi.com

TMOS POWER FET

14 AMPERES, 1000 VOLTS

RDS(on) = 0.80 W

TO−264

CASE 340G−02

STYLE 1

D

G

®

S

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

Drain−to−Gate Voltage (RGS = 1.0 MΩ)

Gate−to−Source Voltage — Continuous

— Single Pulse (tp ≤ 50 μs)

VDSS

VDGR

VGS

VGSM

1000

Vdc

1000

Vdc

± 20

Vdc

± 40

Vpk

Drain Current — Continuous

— Continuous @ TC = 100°C

— Single Pulse (tp ≤ 10 μs)

ID

14

Adc

ID

8.7

IDM

49

Apk

Total Power Dissipation

Derate above 25°C

PD

300

Watts

2.4

W/°C

Operating and Storage Temperature Range

TJ, Tstg

−55 to 150

°C

Single Pulse Drain−to−Source Avalanche Energy — Starting TJ = 25°C

(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 14 Apk, L = 10 mH, RG = 25 Ω )

EAS

980

mJ

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

RθJC

RθJA

0.42

°C/W

30

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

TL

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

© Semiconductor Components Industries, LLC, 2006

1

August, 2006 − Rev. 1

Publication Order Number:

MTY14N100E/D

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