MTY16N80E Ver la hoja de datos (PDF) - ON Semiconductor
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MTY16N80E Datasheet PDF : 7 Pages
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MTY16N80E
SAFE OPERATING AREA
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
1
10 μs
100 μs
1 ms
10 ms
dc
0.1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
1400
1200
ID = 16 A
1000
800
600
400
200
0
25
50
75
100
125
1
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
P(pk)
0.001
t1
t2
DUTY CYCLE, D = t1/t2
0.01
0.1
t, TIME (SECONDS)
Figure 13. Thermal Response
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RθJC(t)
1
1
di/dt
IS
trr
ta
tb
TIME
tp
0.25 IS
IS
Figure 14. Diode Reverse Recovery Waveform
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