MTDF1N02HD Ver la hoja de datos (PDF) - ON Semiconductor
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MTDF1N02HD Datasheet PDF : 12 Pages
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MTDF1N02HD
TYPICAL ELECTRICAL CHARACTERISTICS
4.0
TJ = 25°C
VGS = 10 V
3.0
4.5 V
2.7 V
1.9 V
2.3 V
2.1 V
2.0
1.7 V
1.0
1.5 V
0
0
0.4
0.8
1.2
1.6
2
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Region Characteristics
0.6
ID = 1.7 A
0.5
TJ = 25°C
0.4
0.3
0.2
0.1
0
0
2.0
4.0
6.0
8.0
10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance versus
Gate−to−Source Voltage
4.0
VDS ≥ 10 V
3.0
2.0
100°C
1.0
25°C
TJ = −55°C
0
0.5
1.0
1.5
2.0
2.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
0.15
2.7 V
0.13
TJ = 25°C
0.11
VGS = 4.5 V
0.09
0.07
0.05
0
1.0
2.0
3.0
4.0
ID, DRAIN CURRENT (AMPS)
Figure 6. On−Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 4.5 V
ID = 0.85 A
1.6
1.2
0.8
0.4
0
−50 −25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. On−Resistance Variation
with Temperature
1000
VGS = 0 V
100
10
1.0
TJ = 125°C
100°C
25°C
0.1
0
5.0
10
15
20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Drain−to−Source Leakage Current
versus Voltage
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