MTDF1C02HDR2 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Lista de partido
MTDF1C02HDR2 Datasheet PDF : 14 Pages
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MTDF1C02HD
N−Channel
800
VDS = 0 V VGS = 0 V
Ciss
600
Crss
400
TJ = 25°C
800
Ciss
600
Crss
400
P−Channel
TJ = 25°C
VGS = 0 V
200
0
10
Coss
Crss
5
0
5
10
VGS
VDS
Ciss
15
20
200
0
−10
0
VGS
VDS
Ciss
Coss
Crss
10
20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 7. Capacitance Variation
6
QT
18
5
QT
20
5
15
4
VGS
16
4
12
VDS
VGS
3
9
Q1
Q2
2
6
1
Q3
ID = 1.7 A 3
TJ = 25°C
0
0
0
1.0
2.0
3.0
4.0
5.0
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
VDS
3 Q1
Q2
12
2
1
Q3
8.0
TJ = 25°C
ID = 1.2 A
4.0
0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
100 VDD = 10 V
ID = 1.7 A
VGS = 4.5 V
TJ = 25°C
tf
tr
td(off)
1000
TJ = 25°C
ID = 1.2 A
VDD = 10 V
VGS = 4.5 V
10
td(on)
100
tf
td(off)
tr
td(on)
1.0
10
1.0
10
100
1.0
10
100
RG, GATE RESISTANCE (OHMS)
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Variation versus Gate Resistance
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