MTD6P10E Ver la hoja de datos (PDF) - ON Semiconductor

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MTD6P10E

Power MOSFET 6 Amps, 100 Volts

ON Semiconductor 

MTD6P10E

SAFE OPERATING AREA

100

VGS = 10 V

SINGLE PULSE

TC = 25°C

10

1.0

0.1

0.1

100 ms

1 ms

10 ms

dc

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

1.0

10

100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

200

ID = 6 A

160

120

80

40

0

25

50

75

100

125

150

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

1

D = 0.5

0.2

0.1

0.1 0.05

0.02

0.01

SINGLE PULSE

0.01

1.0E−05

1.0E−04

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

1.0E−03

1.0E−02

t, TIME (s)

1.0E−01

Figure 13. Thermal Response

RqJC(t) = r(t) RqJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RqJC(t)

1.0E+00

1.0E+01

IS

tp

di/dt

trr

ta

tb

0.25 IS

IS

TIME

Figure 14. Diode Reverse Recovery Waveform

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