MTW6N100E Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Lista de partido
MTW6N100E Datasheet PDF : 7 Pages
| |||
MTW6N100E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 1000 Vdc, VGS = 0 Vdc)
(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 3.0 Adc)
Drain−Source On−Voltage (VGS = 10 Vdc)
(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 125°C)
Forward Transconductance (VDS = 10 Vdc, ID = 3.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 500 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 800 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored
Charge
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
ta
tb
QRR
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
LD
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Min
Typ
Max
Unit
1000
−
−
1,270
−
−
−
−
−
−
−
Vdc
−
mV/°C
μAdc
10
100
100
nAdc
2.0
3.0
4.0
Vdc
−
7.0
−
mV/°C
−
1.28
1.5
Ohm
Vdc
−
8.0
14.4
−
−
12.6
4.0
7.2
−
mhos
−
3000
4210
pF
−
219
440
−
43
90
−
27
45
ns
−
29
65
−
93
170
−
43
95
−
66
100
nC
−
12.5
−
−
25.9
−
−
26
−
Vdc
−
0.808
1.0
−
0.64
−
−
735
−
ns
−
188
−
−
547
−
−
4.7
−
μC
−
4.5
−
nH
−
13
−
nH
http://onsemi.com
2
Share Link: 