MMDFS2P102 Ver la hoja de datos (PDF) - ON Semiconductor
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MMDFS2P102 Datasheet PDF : 11 Pages
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MMDFS2P102
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)
Characteristic
Symbol Min
Typ
Max
OFF CHARACTERISTICS
Drain−Source Voltage
(VGS = 0 Vdc, ID = 0.25 mA)
Temperature Coefficient (Positive)
Zero Gate Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Temperature Coefficient (Negative)
Static Drain−Source Resistance
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDS = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
Gate Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
DRAIN SOURCE DIODE CHARACTERISTICS
Forward On−Voltage (Note 5)
(IS = 2.0 Adc,
VGS = 0 Vdc)
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 2.0 Adc, VDD = 15 V,
dIS/dt = 100 A/μs)
V(BR)DSS
20
−
IDSS
−
−
IGSS
−
VGS(th)
1.0
−
RDS(on)
−
−
gFS
2.0
Ciss
−
Coss
−
Crss
−
td(on)
−
tr
−
td(off)
−
tf
−
QT
−
Q1
−
Q2
−
Q3
−
VSD
−
trr
−
ta
−
tb
−
QRR
−
−
25
−
−
−
1.5
4.0
0.118
0.152
3.0
420
290
116
19
66
25
37
15
1.2
5.0
4.0
1.5
38
17
21
0.034
−
−
1.0
10
100
2.0
−
0.160
0.180
−
588
406
232
38
132
50
74
20
−
−
−
2.1
−
−
−
−
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Maximum Instantaneous Forward Voltage (Note 5)
IF = 1.0 A
IF = 2.0 A
VF
TJ = 25°C
0.47
0.58
TJ = 125°C
0.39
0.53
Maximum Instantaneous Reverse Current (Note 5)
VR = 20 V
IR
TJ = 25°C
TJ = 125°C
0.05
10
Maximum Voltage Rate of Change
VR = 20 V
4. Negative sign for P−channel device omitted for clarity.
5. Pulse Test: Pulse Width ≤ 300 μsec, Duty Cycle ≤ 2.0%.
6. Switching characteristics are independent of operating temperature.
dV/dt
10,000
Unit
Vdc
mV/°C
μAdc
nAdc
Vdc
mV/°C
Ohms
mhos
pF
ns
nC
V
ns
μC
Volts
mA
V/ms
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