MMDF2C02ER2 Ver la hoja de datos (PDF) - Motorola => Freescale

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MMDF2C02ER2

Complementary TMOS Field Effect Transistors

Motorola => Freescale 

MMDF2C02E

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)

Characteristic

Symbol Polarity Min

Typ

Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS(2)

V(BR)DSS

—

IDSS

(N)

(P)

IGSS

—

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 2.2 Adc)

(VGS = 10 Vdc, ID = 2.0 Adc)

Drain–to–Source On–Resistance

(VGS = 4.5 Vdc, ID = 1.0 Adc)

(VGS = 4.5 Vdc, ID = 1.0 Adc)

On–State Drain Current

(VDS = 5.0 Vdc, VGS = 4.5 Vdc)

Forward Transconductance

(VDS = 3.0 Vdc, ID = 1.5 Adc)

(VDS = 3.0 Vdc, ID = 1.0 Adc)

DYNAMIC CHARACTERISTICS

VGS(th)

—

RDS(on)

(N)

(P)

RDS(on)

(N)

(P)

ID(on)

(N)

(P)

gFS

(N)

(P)

Input Capacitance

Ciss

(N)

(P)

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

Coss

(N)

f = 1.0 MHz)

(P)

Transfer Capacitance

SWITCHING CHARACTERISTICS(3)

Crss

(N)

(P)

Turn–On Delay Time

Rise Time

td(on)

(N)

(VDD = 10 Vdc, ID = 2.0 Adc,

(P)

VGS = 4.5 Vdc,

RG = 9.1 Ω)

tr

(N)

(P)

Turn–Off Delay Time

Fall Time

(VDD = 10 Vdc, ID = 1.0 Adc,

VGS = 5.0 Vdc,

td(off)

(N)

(P)

RG = 25 Ω)

tf

(N)

(P)

Turn–On Delay Time

Rise Time

td(on)

(N)

(VDD = 10 Vdc, ID = 2.0 Adc,

(P)

VGS = 10 Vdc,

RG = 6.0 Ω)

tr

(N)

(P)

Turn–Off Delay Time

Fall Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

td(off)

(N)

(P)

RG = 6.0 Ω)

tf

(N)

(P)

Total Gate Charge

QT

(N)

(P)

Gate–Source Charge

Gate–Drain Charge

Q1

(N)

(VDS = 16 Vdc, ID = 2.0 Adc,

(P)

VGS = 10 Vdc)

Q2

(N)

(P)

Q3

(N)

(P)

(1) Negative signs for P–Channel device omitted for clarity.

(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(3) Switching characteristics are independent of operating junction temperature.

Vdc

25

—

—

—

—

1.0

µAdc

—

—

1.0

—

—

100 nAdc

Vdc

1.0

2.0

3.0

Ohm

—

—

0.100

—

—

0.250

Ohm

—

—

0.200

—

—

0.400

2.0

—

2.0

—

—

Adc

—

mhos

1.0

2.6

—

1.0

2.8

—

—

380

532

pF

—

340

475

—

235

329

—

220

300

—

55

110

—

75

150

—

10

30

ns

—

20

40

—

35

70

—

40

80

—

19

38

—

53

106

—

25

50

—

41

82

—

7.0

21

—

13

26

—

17

30

—

29

58

—

27

48

—

30

60

—

18

30

—

28

56

—

10.6

30

nC

—

10

15

—

1.3

—

—

1.0

—

—

2.9

—

—

3.5

—

—

2.7

—

—

3.0

—

(continued)

2

Motorola TMOS Power MOSFET Transistor Device Data

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