MMDF2C02E Ver la hoja de datos (PDF) - ON Semiconductor

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MMDF2C02E

Power MOSFET 2.5 Amps, 25 Volts

ON Semiconductor 

MMDF2C02E

ELECTRICAL CHARACTERISTICS − continued (TA = 25°C unless otherwise noted) (Note 6)

Characteristic

Symbol Polarity

Min

SWITCHING CHARACTERISTICS − continued (Note 8)

Total Gate Charge

QT

(N)

−

(P)

−

Gate−Source Charge

Q1

(N)

−

(VDS = 16 Vdc, ID = 2.0 Adc,

(P)

−

Gate−Drain Charge

VGS = 10 Vdc)

Q2

(N)

−

(P)

−

Q3

(N)

−

(P)

−

SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C)

Forward Voltage (Note 7) (IS = 2.0 Adc, VGS = 0 Vdc)

VSD

(N)

−

(IS = 2.0 Adc, VGS = 0 Vdc)

(P)

−

Reverse Recovery Time

see Figure 7

trr

(N)

−

(P)

−

(IF = IS,

dIS/dt = 100 A/ms)

ta

(N)

−

(P)

−

tb

(N)

−

(P)

−

QRR

(N)

−

(P)

−

6. Negative signs for P−Channel device omitted for clarity.

7. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

8. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

Typ

10.6

10

1.3

1.0

2.9

3.5

2.7

3.0

1.0

1.5

34

32

17

19

17

12

0.025

0.035

Max

Unit

30

nC

15

−

−

−

−

−

−

1.4

Vdc

2.0

66

ns

64

−

−

−

−

−

mC

−

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