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ATWINC1500B-MU Ver la hoja de datos (PDF) - Atmel Corporation

Número de pieza
componentes Descripción
Lista de partido
ATWINC1500B-MU
Atmel
Atmel Corporation Atmel
ATWINC1500B-MU Datasheet PDF : 35 Pages
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4.3 DC Electrical Characteristics
Table 4-3 provides the DC characteristics for the ATWINC1500B digital pads.
Table 4-3. Electrical Characteristics
Characteristic
Min.
Typ.
Max.
Unit
Input Low Voltage VIL
-0.30
0.65
Input High Voltage VIH
Output Low Voltage VOL
VDDIO-0.60
VDDIO+0.30
V
0.45
Output High Voltage VOH
VDDIO-0.50
Output Loading
Digital Input Load
20
pF
6
Pad Drive Strength (regular pads1)
8
13.5
mA
Pad Drive Strength (high-drive pads1)
16
27
Note: 1. The following are high-drive pads: I2C_SCL, I2C_SDA; all other pads are regular.
5 Clocking
5.1 Crystal Oscillator
Table 5-1. Crystal Oscillator Parameters
Parameter
Min.
Typ.
Max.
Unit
Crystal Resonant Frequency
12
26
40
MHz
Crystal Equivalent Series Resistance
50
150
Stability Initial Offset1
Stability - Temperature and Aging
-100
-25
100
ppm
25
Note: 1. Initial offset must be calibrated to maintain ±25ppm in all operating conditions. This calibration is performed
during final production testing.
The block diagram in Figure 5-1(a) shows how the internal Crystal Oscillator (XO) is connected to the external
crystal. The XO has 5pF internal capacitance on each terminal XO_P and XO_N. To bypass the crystal
oscillator with an external reference, an external signal capable of driving 5pF can be applied to the XO_N
terminal as shown Figure 5-1(b).
10
A1tmel ATWINC1500B-MU [DATASHEET]
Atmel-42487B-ATWINC1500B-MU_Datasheet_03/2016
0

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