IRF5805TRPBF Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd
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IRF5805TRPBF Datasheet PDF : 9 Pages
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IRF5805TRPBF
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.25
0.20
www.VBsemi.tw
ID = 4.1 A
TJ = 150 °C
0.15
10
TJ = 25 °C
0.10
TJ = 125 °C
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.2
ID = 250 µA
2.0
0.05
TJ = 25 °C
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
25
20
1.8
15
1.6
10
1.4
5
1.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
100
Time (s)
Single Pulse Power
1000
100
Limited by RDS(on)*
10
100 µs
1
1 ms
10 ms
0.1
100 ms
1s, 10 s
0.01
0.1
TA = 25 °C
Single Pulse
1
BVDSS
Limited
10
DC
100
* VGS
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
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