IRFM240 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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IRFM240

POWER MOSFET THRU-HOLE (TO-254AA)

New Jersey Semiconductor 

Footnotes:

CD Repetitive Rating; Pulse width limited by

maximum junction temperature.

® VDD = 50V, starting Tj = 25°C, L= 1.3mH

Peak IL = 18A, VQS = 10V

IRFM240

ISO ^ 18A, di/dt < 1 SOA/Lis,

VDD <2oov, TJ < i5o°c

Pulse width < 300 us; Duty Cycle < 2%

Case Outline and Dimensions —TO-254AA

6 60 I 260|

6 32 | 249|

17 40 I 685)

LU

2373(895] 16B9|G6G]

21 Zl [.8JSJ

|»|00.36|OI«|®|B|<D[

NOTES:

1. DIMENSIONING 8, TaERANONGPER/SSWt Y14.5M-1994.

2. ALL DIMENSIONS ARE SHOWN IN MLLIMETERS IINCHES].

3. CONTROLLINGDIMENSION:INCH.

4 CONFORMS TOJEDECOUFLINE IO-254AA

PIN ASSIGNMENTS

1 » DRAIN

2 = SOURCE

3 . GATE

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them

which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that

will produce fumes containing beryllium.

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