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IRFF120

6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET

New Jersey Semiconductor 

IRFF120

Source to Drain Diode Specifications

PARAMETER

Continuous Source to Drain Current

Pulse Source to Drain Current (Note 3)

SYMBOL

TEST CONDITIONS

MIN TYP

ISD

Modified MOSFET

Symbol Showing the

'SM

Integral Reverse P-N

)D

-

-

Junction Rectifier

y*) no Vfa i i

Source to Drain Diode Voltage (Note 2)

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

VSD

trr

QRR

'ON

i1 S

Tj = 25°C, ISD = 6.0A, VGS = 0V (Figure 13)

Tj = 150°C, ISD = 6.0A, dlSD/dt = 100A/us

Tj = 150°C, ISD= 6.0A, dlSD/dt = lOOA/us

Intrinsic Turn-on Time is Negligible, Turn-On

Speed is Substantially controlled by Lg + LD

-

-

-

230

-

1.0

-

-

NOTES:

2. Pulse test: pulse width < SOO^is, duty cycle < 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 25V, starting Tj = 25°C, L = 1.5mH, RG = 25U, peak IAS = 6.0A (Figures 15, 16).

MAX

6.0

24

2.5

-

-

-

UNITS

A

A

V

ns

uC

-

Typical Performance Curves unless otherwise specified

cuc « rt

\^

6.0

,<-. 4.8

\

Tc, CASE TEMPERATURE (°C)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2.4

1.2

50

25

50

75

100

125

150

Tc, CASE TEMPERATURE (°C)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

NOTES:

DUTY FACTOR: D = t-|/t2

PEAK TJ = PDM x ZBJC » RHJC +Tc

1f RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

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