IRG4PC30S Ver la hoja de datos (PDF) - International Rectifier

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IRG4PC30S

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

IRG4PC30S

60

50

40

S qu are wave:

30

60 % of rated

v oltag e

20

For both:

Duty cycle: 50%

TJ = 125° C

Tsink = 90°C

G ate drive as specified

Po w er D iss ip ation = 24 W

Trian gu la r w a ve:

C lam p vo lta ge:

80% of rated

10

Ideal diodes

0

A

0.1

1

10

100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100

TJ = 25 oC

TJ = 150 oC

10

VGE = 15V

20µs PULSE WIDTH

1

1

10

VCE, Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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100

TJ = 150 oC

10

TJ = 25 oC

1

0.1

5

VCC = 50V

5µs PULSE WIDTH

6

7

8

9

10

VGE , Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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