IRF3315S Ver la hoja de datos (PDF) - Inchange Semiconductor

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IRF3315S

N-Channel MOSFET Transistor

Inchange Semiconductor 

Isc N-Channel MOSFET Transistor

IRF3315S

·FEATURES

·With To-263(D2PAK) package

·Low input capacitance and gate charge

·Low gate input resistance

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·APPLICATIONS

·Switching applications

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VDSS

Drain-Source Voltage

150

VGSS

ID

IDM

Gate-Source Voltage

Drain Current-ContinuousTc=25℃

Tc=100℃

Drain Current-Single Pulsed

±20

21

15

84

PD

Total Dissipation @TC=25℃

94

Tch

Max. Operating Junction Temperature

175

Tstg

Storage Temperature

-55~175

UNIT

V

V

A

A

W

℃

℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth(ch-c) Channel-to-case thermal resistance

Rth(ch-a) Channel-to-ambient thermal resistance

MAX

1.6

40

UNIT

℃/W

℃/W

isc website：www.iscsemi.cn

1 isc & iscsemi is registered trademark

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