IRF9530NS Ver la hoja de datos (PDF) - Inchange Semiconductor
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IRF9530NS Datasheet PDF : 2 Pages
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isc P-Channel MOSFET Transistor
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A)
·Advanced trench process technology
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Fast switching application.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
-14
PD
Total Dissipation @TC=25℃
79
Tj
Max. Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
W
℃
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c) Channel-to-case thermal resistance
1.9
℃/W
IRF9530NS
isc website：www.iscsemi.cn
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