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RMDA1840

18-40 GHz Broad Band Driver Amplifier MMIC

Fairchild Semiconductor 

Application

Information

RMDA1840

18-40 GHz Broad Band Driver Amplifier

MMIC

PRODUCT INFORMATION

CAUTION: THIS IS AN ESD SENSITIVE DEVICE.

Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal

conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,

plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.

Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for

PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground.

These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination

of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including

the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent

static discharges through the device.

Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical

allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding

to a typical 2 mil gap between the chip and the substrate material.

Recommended

Procedure

for Biasing and

Operation

CAUTION: THIS IS AN ESD SENSITIVE DEVICE.

CAUTION: LOSS OF GATE VOLTAGES (Vg) WHILE DRAIN VOLTAGES (Vd) IS PRESENT MAY DAMAGE THE

AMPLIFIER CHIP.

The following sequence of steps must be followed to properly test the amplifier.

Step 1: Turn off RF input power.

Step 5: After the bias condition is established, RF input

Step 2: Connect the DC supply grounds to the grounds

of the chip carrier. Slowly apply negative gate

signal may now be applied at the appropriate

frequency band.

bias supply voltage of -1.5 V to Vg.

Step 6: Follow turn-off sequence of:

Step 3: Slowly apply positive drain bias supply voltage

of +5 V to Vd.

Step 4: Adjust gate bias voltage to set the quiescent

current of Idq = 400 mA.

(i) Turn off RF input power,

(ii) Turn down and off drain voltage (Vd),

(iii) Turn down and off gate bias voltage (Vg).

Figure 1

Functional Block

Diagram

Drain Supply Drain Supply Drain Supply Drain Supply

Vd1

Vd2

Vd3

Vd4

RF IN

MMIC Chip

RF OUT

Ground Gate Supply Gate Supply Gate Supply Gate Supply

Back of Chip

Vg1

Vg2

Vg3

Vg4

Characteristic performance data and specifications are subject to change without notice.

Revised January 15, 2001

Page 2

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