STS4DNF60L Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd
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STS4DNF60L Datasheet PDF : 9 Pages
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STS4DNF60L
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
75
ID = 5.3 A
1.7
VGS = 10 V
ID = 1 mA
72
1.4
VGS = 4.5 V
69
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1.1
66
0.8
63
0.5
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
60
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
0.25
10
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.20
0.15
0.10
0.05
TJ = 150 °C
TJ = 25 °C
0
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.6
0.3
0
-0.3
ID = 5 mA
-0.6
ID = 250 μA
-0.9
-1.2
-50 -25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
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