TEMD5100 Ver la hoja de datos (PDF) - Vishay Semiconductors
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TEMD5100 Datasheet PDF : 6 Pages
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TEMD5100
Vishay Semiconductors
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Open Circuit Voltage
Short Circuit Current
Reverse Light Current
Angle of Half Sensitivity
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
Fall Time
VR = 10 V, λ = 950 nm
VR = 10 V, RL = 1 kΩ, λ = 820 nm
VR = 10 V, RL = 1 kΩ, λ = 820 nm
Symbol
Vo
Ik
Ira
ϕ
λp
λ0.5
NEP
tr
tf
Min
Typ.
Max
350
50
40
55
± 65
950
840 to 1050
4 x 10-14
100
100
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000
1000
Unit
mV
µA
µA
deg
nm
nm
W/√ Hz
ns
ns
100
10
1
20
94 8403
VR = 10 V
40
60
80
100
Tamb - Ambient Temperature ( ° C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
100
10
1
VR = 5 V
λ= 950 nm
0.1
0.01
12787
0.1
1
10
Ee – Irradiance ( mW/cm2 )
Figure 3. Reverse Light Current vs. Irradiance
1.4
1.2
VR = 5 V
λ = 950 nm
1.0
0.8
0.6
0
94 8409
20
40 60
80 100
Tamb - Ambient Temperature ( ° C )
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
100
1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
10
0.1 mW/cm2
0.05 mW/cm2
λ = 950 nm
1
0.1
1
10
100
12788
VR – Reverse Voltage ( V )
Figure 4. Reverse Light Current vs. Reverse Voltage
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2
Document Number 81553
Rev. 1.4, 08-Mar-05
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