P4C1982 Ver la hoja de datos (PDF) - Semiconductor Corporation

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P4C1982

ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS

Semiconductor Corporation 

WRITE CYCLE NO. 2 (WE CONTROLLED)(13,14)

P4C1981/1981L, P4C1982/1982L

1520 08

WRITE CYCLE NO. 3 (CE1, CE2 CONTROLLED)(11,12)

Notes:

12. CE (CE1, CE2) and WE must be LOW for WRITE cycle.

13. OE is LOW for WRITE cycle.

14. If CE1 or CE2 goes HIGH simultaneously with WE HIGH, the

output remains in a high impedance state.

15. Write Cycle Time is measured from the last valid address to the

first transitioning address.

Document # SRAM114 REV B

Page 7 of 13

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