3SK264 Ver la hoja de datos (PDF) - ON Semiconductor
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Lista de partido
3SK264 Datasheet PDF : 4 Pages
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3SK264
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
VDS
VG1S=0V, VG2S=0V, IDS=100mA
Gate1-to-Source Cutoff Voltage
VG1S(off) VDS=6V, VG2S=4V, ID=100mA
Gate2-to-Source Cutoff Voltage
VG2S(off) VDS=6V, VG1S=3V, ID=100mA
Gate1-to-Source Leakage Current
IG1SS
VG1S=±6V, VG2S=VDS=0V
Gate2-to-Source Leakage Current
IG2SS
VG2S=±6V, VG1S=VDS=0V
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
IDSX
| yfs |
VDS=6V, VG1S=1.5V, VG2S=4V
VDS=6V, ID=10mA, VG2S=4V, f=1kHz
Input Capacitance
Reverse Transfer Capacitance
Ciss
Crss
VDS=6V, VG1S=0V, VG2S=4V, f=1MHz
Power Gain
Noise Figure
PG
VDS=6V, ID=10mA, VG2S=4V, f=200MHz
NF
VDS=6V, ID=10mA, VG2S=4V, f=200MHz
* : The 3SK264 is classified by IDSX as follows : (unit : mA)
Rank
5
IDSX
5.0 to 12.0
Ratings
Unit
min
typ
max
15
V
0
0.7
1.3
V
0.1
0.9
1.6
V
±50
nA
±50
nA
*5
*12 mA
17
mS
2.5
pF
0.015
0.03
pF
20
23
dB
1.1
2.2
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
PG, NF Specified Test Circuit
f=200MHz
~20pF
IN
1000pF
2
3
4
T
50Ω
47pF
1000pF
VG1S
15kΩ
2
1
2
T
~20pF
12Ω
1000pF
~20pF
1
1
2
T
VG2S
VDS
L : 1mmØ enamel wire 10mmØ
OUT
50Ω
Ordering Information
Device
3SK264-5-TG-E
Package
CP4
Shipping
3,000pcs./reel
memo
Pb-Free
No.4901-2/4
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