SI4300DY Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI4300DY
Vishay Semiconductors
SI4300DY Datasheet PDF : 5 Pages
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Si4300DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
0.20
MOSFET
On-Resistance vs. Gate-to-Source Voltage
0.16
10
TJ = 150_C
TJ = 25_C
0.12
ID = 9 A
0.08
0.04
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
0.6
0.4
ID = 250 mA
0.2
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (_C)
0.00
0
30
25
20
15
10
5
0
0.01
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
0.1
1
Time (sec)
10 30
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 70_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
2-4
Document Number: 71772
S-03951—Rev. B, 26-May-03
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