SIHF740AS Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd
Número de pieza
componentes Descripción
Lista de partido
SIHF740AS Datasheet PDF : 8 Pages
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SiHF740AS
24
VDS = 520 V
20
VDS = 325 V
VDS = 130 V
16
12
8
4
0
0
30
60
90
120
150
Qg, Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
100
TJ = 150 °C
10
TJ = 25 °C
1
VGS = 0 V
0.1
0.2 0.4 0.6 0.8 1
1.2 1.4 1.6
VSD, Source-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
100
IDM Limited
10
Limited by RDS(on)*
100 μs
1
Operation in this Area
Limited by RDS(on)
1 ms
0.1
TC = 25 °C
TJ = 150 °C
Single Pulse
0.01
10 ms
BVDSS Limited
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 9 - Maximum Safe Operating Area
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25
20
15
10
5
0
25
50
75
100
125
150
TJ, Case Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
850
ID = 10 mA
825
800
775
750
725
700
675
650
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 11 - Temperature vs. Drain-to-Source Voltage
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4
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