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IGC06R60DE Ver la hoja de datos (PDF) - Infineon Technologies

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IGC06R60DE Datasheet PDF : 6 Pages
1 2 3 4 5 6
IGC06R60DE
TRENCHSTOPTM RC-Series for hard switching applications
IGBT chip with monolithically integrated diode in packages offering space saving advantage
Features:
TRENCHSTOPTM Reverse Conducting (RC) technology for
600V applications offering:
• Optimised VCEsat and VF for low conduction losses
• Smooth switching performance leading to low EMI levels
• Very tight parameter distribution
• Operating range of 1 to 20kHz
• Maximum junction temperature 175°C
• Short circuit capability of 5μs
• Best in class current versus package size performance
• Qualified according to JEDEC for target applications
• Complete product spectrum and PSpice Models:
http://www.infineon.com/igbt/
Applications:
Motor drives
Used for:
Discrete components and molded modules
Chip Type
IGC06R60DE
VCE
ICn
600V 8A
Die Size
2.44 x 2.47 mm2
Package
sawn on foil
Mechanical Parameters
Raster size
Emitter pad size
Gate pad size
Area: total / active IGBT / active Diode
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
for original and
sealed MBB bags
Storage environment
for open MBB bags
2.44 x 2.47
see chip drawing
see chip drawing
mm2
6.026 / 3.718 / 0.702
70
µm
200
mm
4631
Photoimide
3200 nm AlSiCu
Ni Ag –system
Electrically conductive epoxy glue and soft solder
(temperature budget: 290°C for 1min. or 260°C for 1.5min.)
Al, <350µm
0.65mm ; max 1.2mm
Ambient atmosphere air, Temperature 17°C – 25°C,
< 6 month
Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,
Humidity <25%RH, Temperature 17°C – 25°C, < 6 month
Edited by INFINEON Technologies, IFAG IMM PSD D, L7388B, Edition 1.1, 31.05.2013

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