IRFRC20 Ver la hoja de datos (PDF) - Inchange Semiconductor
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IRFRC20 Datasheet PDF : 2 Pages
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iscN-Channel MOSFET Transistor
IRFRC20
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
600
V
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=0.25mA
2.0
4.0
V
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=1.2A
4.4
Ω
IGSS
IDSS
VSDF
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
Drain-Source Leakage Current
VDS=600V; VGS= 0V
VDS=480V; VGS= 0V;TJ=125℃
Diode forward voltage
IDR =2.0A, VGS = 0 V
±100 nA
100
500
uA
1.6
V
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
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