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ES3JF Ver la hoja de datos (PDF) - Jiangsu High diode Semiconductor Co., Ltd

Número de pieza
componentes Descripción
Lista de partido
ES3JF
HDSEMI
Jiangsu High diode Semiconductor Co., Ltd HDSEMI
ES3JF Datasheet PDF : 4 Pages
1 2 3 4
ES3AF THRU ES3JF
SMAF Plastic-Encapsulate Diodes
Super Fast Recovery Rectifier Diode
Features
Io
3A
VRRM
50V-600V
High surge current capability
Glass passivated chip
Polarity: Color band denotes cathode
Applications
Rectifier
Marking
ES3AF-ES3JF : ES3A-ES3J
SMAF
HD AF80
Item
Symbol Unit
Repetitive Peak Reverse Voltage VRRM
V
Maximum RMS Voltage
V RMS
V
Test Conditions
ES3
AF BF CF DF EF GF HF JF
50 100 150 200 300 400 500 600
35 70 105 140 210 280 350 420
Average Forward Current
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
IF(AV)
IFSM
TJ
TSTG
A 60HZ Half-sine wave, Resistance
load, TL=120
A
60Hz Half-sine wave ,1 cycle ,
Ta =25
3.0
100
-55~+150
-55 ~ +150
Electrical Characteristics (Ta=25Unless otherwise specified
Item
Peak Forward Voltage
Symbol
VF
Unit
V
Test Condition
IF =3.0A
ES3
AF BF CF DF FF GF HF JF
0.95
1.25
1.7
Maximum reverse recovery
time
trr
ns
IF=0.5A,IR=1.0A,Irr=0.25A
35
Peak Reverse Current
IRRM1
IRRM2
μA
VRM=VRRM
Ta =25
Ta =100
10
100
Thermal
RθJ-A
Between junction and ambient
471)
Resistance(Typical)
/W
RθJ-L
Between junction and terminal
121)
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
High Diode Semiconductor
1

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