IR2213STRPBF Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Lista de partido
IR2213STRPBF Datasheet PDF : 18 Pages
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Features
Floating channel designed for bootstrap operation
Fully operational to +1200 V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 12 V to 20 V
Undervoltage lockout for both channels
3.3 V logic compatible
Separate logic supply range from 3.3 V to 20 V
Logic and power ground ±5 V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
IR2213(S)PBF
High and Low Side Driver
Product Summary
VOFFSET (max)
IO+/-
VOUT
ton/off (typical)
Delay Matching
1200 V
1.7 A / 2 A
12 V – 20 V
280 ns / 225 ns
30 ns
Description
The IR2213(S) is a high voltage, high speed power
MOSFET and IGBT driver with independent high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL outputs, down to 3.3 V logic.
The output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction.
Propagation delays are matched to simplify use in high
frequency applications. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in the high
side configuration which operates up to 1200 V.
Package Options
16 Lead SOIC
(Wide Body)
14 Lead PDIP
Ordering Information
Base Part Number
IR2213SPBF
IR2213SPBF
IR2213PBF
Package Type
SO16WB
SO16WB
PDIP14
Standard Pack
Form
Quantity
Tube
45
Tape and Reel
1000
Tube
25
Orderable Part Number
IR2213SPBF
IR2213STRPBF
IR2213PBF
1 www.irf.com © 2016 International Rectifier
April 26, 2016
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