BR24G04FVM-3E2(2013) Ver la hoja de datos (PDF) - ROHM Semiconductor
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BR24G04FVM-3E2
(Rev.:2013)
(Rev.:2013)
ROHM Semiconductor
BR24G04FVM-3E2 Datasheet PDF : 37 Pages
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BR24G04-3
Datasheet
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Rating
Supply Voltage
VCC
Power Dissipation
Pd
Storage Temperature
Tstg
Operating Temperature Topr
-0.3 to +6.5
450 (SOP8)
450 (SOP-J8)
300 (SSOP-B8)
330 (TSSOP-B8)
310 (TSSOP-B8J)
310 (MSOP8)
300 (VSON008X2030)
800 (DIP-T8)
-65 to +150
-40 to +85
Input Voltage /
Output Voltage
Junction
Temperature
Electrostatic discharge
voltage
(human body model)
‐
Tjmax
VESD
-0.3 to Vcc+1.0
150
-4000 to +4000
Unit
Remark
V
Derate by 4.5mW/°C when operating above Ta=25°C
Derate by 4.5mW/°C when operating above Ta=25°C
Derate by 3.0mW/°C when operating above Ta=25°C
Derate by 3.3mW/°C when operating above Ta=25°C
mW
Derate by 3.1mW/°C when operating above Ta=25°C
Derate by 3.1mW/°C when operating above Ta=25°C
Derate by 3.0mW/°C when operating above Ta=25°C
Derate by 8.0mW/°C when operating above Ta=25°C
℃
℃
The Max value of Input Voltage/Output Voltage is not over 6.5V.
V When the pulse width is 50ns or less, the Min value of Input
Voltage/Output Voltage is not lower than -0.8V.
℃ Junction temperature at the storage condition
V
Memory Cell Characteristics (Ta=25℃, VCC=1.6V to 5.5V)
Parameter
Write Cycles (1)
Data Retention (1)
Limit
Min
Typ Max
1,000,000 -
-
40
-
-
(1) Not 100% TESTED
Unit
Times
Years
Recommended Operating Ratings
Parameter
Symbol
Rating
Unit
Power Source Voltage
Input Voltage
VCC
1.6 to 5.5
VIN
0 to Vcc
V
DC Characteristics (Unless otherwise specified, Ta=-40℃ to +85℃, VCC=1.6V to 5.5V)
Parameter
Limit
Symbol
Unit
Min Typ Max
Conditions
Input High Voltage1
Input Low Voltage1
Input High Voltage2
Input Low Voltage2
Output Low Voltage1
Output Low Voltage2
Input Leakage Current
Output Leakage Current
Supply Current (Write)
VIH1
VIL1
VIH2
VIL2
VOL1
VOL2
ILI
ILO
ICC1
0.7Vcc
-0.3(2)
0.8Vcc
-0.3(2)
-
-
-1
-1
-
Supply Current (Read)
ICC2
-
Standby Current
ISB
-
(2) When the pulse width is 50ns or less, it is -0.8V.
- Vcc+1.0 V 1.7V≦Vcc≦5.5V
- +0.3Vcc V 1.7V≦Vcc≦5.5V
- Vcc+1.0 V 1.6V≦Vcc＜1.7V
- +0.2Vcc V 1.6V≦Vcc＜1.7V
-
0.4
V IOL=3.0mA, 2.5V≦VCC≦5.5V (SDA)
-
0.2
V IOL=0.7mA, 1.6V≦VCC＜2.5V (SDA)
-
+1
µA VIN=0 to Vcc
-
+1
µA VOUT=0 to Vcc (SDA)
-
2.0
mA
Vcc=5.5V, fSCL=400kHz, tWR=5ms,
Byte write, Page write
-
0.5
mA
Vcc=5.5V, fSCL=400kHz
Random read, current read, sequential read
-
2.0
µA
Vcc=5.5V, SDA・SCL=Vcc
A0,A1,A2=GND,WP=GND
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31.May.2013 Rev.003
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