R6020JNJ Ver la hoja de datos (PDF) - ROHM Semiconductor
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Lista de partido
R6020JNJ Datasheet PDF : 14 Pages
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R6020JNJ
Nch 600V 20A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
600V
0.234Ω
±20A
252W
lFeatures
1) Fast reverse recovery time (trr)
2) Low on-resistance
3) Fast switching speed
4) Drive circuits can be simple
5) Pb-free plating ; RoHS compliant
lOutline
LPT(S)
lInner circuit
Datasheet
lApplication
Switching applications
lPackaging specifications
Packing
Embossed Tape
Packing code
TL
Marking
R6020JNJ
Quantity (pcs)
1000
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
600
V
Continuous drain current (Tc = 25°C)
ID*1
±20
A
Pulsed drain current
IDP*2
±60
A
Gate - Source voltage
VGSS
±30
V
Avalanche current, single pulse
IAS*3
4.8
A
Avalanche energy, single pulse
EAS*3
618
mJ
Power dissipation (Tc = 25°C)
PD
252
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20190527 - Rev.002
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